NSTU-NETI engineers are developing a technology for manufacturing heterogeneous electrical energy converters with high specific power based on modern wide-band semiconductors. The project solves the problems of import substitution and the creation of a new generation component base for power electronics. The work is carried out within the framework of a grant from the Russian Science Foundation.
The production of server and telecommunication equipment, unmanned aerial vehicles, and radar systems (AFAR) requires the development of high-tech production in various areas, including in the field of secondary power sources, notes the project leader, Associate professor of the Department of Electronics and Electrical Engineering, head of the laboratory "Elements of Power Electronics" of NSTU -NETI, Candidate of Technical Sciences Maxim Dybko. As part of the project, a technology for designing and manufacturing compact converters based on wide-band gallium nitride transistors and a ceramic multilayer printed circuit board will be developed.
"Unlike silicon, gallium nitride has a band gap three times higher, which allows semiconductor devices to operate at higher voltages. Transistors based on gallium nitride are capable of operating at switching frequencies up to several megahertz and higher, which reduces the size of the passive components of the converter. All this makes it possible to make the power supply more compact while maintaining high power," said Maxim Dybko.
Heterogeneity implies the placement of bodyless semiconductor crystals and packaged elements on a single printed circuit board. The hybrid integrated circuit provides a high installation density, reducing the size and weight of the device while maintaining functionality.
Key aspects of the technology of designing and manufacturing heterogeneous high-frequency power converters with high power density include the design features of a power circuit using high-frequency semiconductors, the control features of gallium nitride power transistors, design technologies for high-current planar transformers with currents of tens and hundreds of amperes with compact dimensions (on the order of one cubic inch), the use of specialized PWMcontrollers that can be configured using several parameters, which reduces the size and simplifies debugging of the control system, as well as the use of low-temperature ceramic co-annealing (LTCC) for the manufacture of multilayer printed circuit boards.
"This year, we are manufacturing a converter based on packaged elements and a multilayer printed circuit board made of textolite, using the developments that we received in the project "Development of hybrid power modules for aerospace and industrial applications" of the Priority 2030 program. So, last year, at the initiative of one of the industrial partners, the development of a compact DC voltage converter for data center power supply systems was launched. For this purpose, the developments obtained during the creation of a hybrid integrated power circuit of a transistor rack, which used silicon carbide-based transistor crystals, were applied. Here we decided to go further in two directions at once: designing more complex semiconductor converters based on gallium nitride transistors, as well as increasing the specific power," notes Maxim Dybko.
The developers are currently testing the first samples of the converter on gallium nitride transistors. Next year, it is planned to produce a sample on a ceramic substrate with crystals. The use of low-temperature ceramics instead of traditional textolite for the manufacture of printed circuit boards will allow up to eight times more heat to be dissipated. An effective heat sink is important to prevent overheating of power components, ensure stable operation and high efficiency, adds Maxim Dybko.
According to him, the scientific novelty of the RSF grant project is in the analytical calculation of converter modes, in the development of control algorithms and in the design of an integrated power transformer that will be integrated into the board.
There are enterprises in Novosibirsk and the region interested in producing such converters. Potential customer partners are JSC NII Oktava (manufacturer of AFARS), LLC Aerofregat (manufacturer of unmanned aerial vehicles). In addition, there are interested enterprises manufacturing gallium nitride transistors, such as JSC Power Key and JSC NIIET (both enterprises are part of the Element Group of Companies).
The project "Development of manufacturing technology for heterogeneous electric energy converters with high specific power based on modern wide-band semiconductors" was included in the list of supported projects following the results of the regional competition for grants from the Russian Science Foundation.